Convergent beam electron diffraction measurements of relaxation in strained silicon using higher order Laue zone line splitting

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Diercks, David ^a   Kaufman, Michael ^b   Needleman, Alan ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b Department of Metallurgical and Materials Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLANKET WAFERS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONVERGENT-BEAM ELECTRON DIFFRACTIONS; FINITE-ELEMENT MODELING; HIGHER ORDER LAUE ZONES; LINEAR ELASTICS; SAMPLE THICKNESS; SIGE/SI; SIMPLE METHODS; STRAINED SILICONS;

ELECTRON DIFFRACTION; HOLOGRAPHIC INTERFEROMETRY; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; STRAIN MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

SILICON WAFERS;

EID: 63749085511     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3093693     Document Type: Article

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