Higher-order Laue zone line contrast in large-angle convergent-beam electron diffraction around a dislocation

Journal of Microscopy

Volumn 203, Issue 3, 2001, Pages 239-245

  Toda, A ^a   Ikarashi, N ^a   Ono, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Dislocation and silicon; Higher order Laue zone (HOLZ) line; Large angle convergent beam electron diffraction (LACBED)

Indexed keywords

ATOMS; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION;

ATOMIC DISPLACEMENT; BURGER VECTORS; DISLOCATION AND SILICON; DISPLACEMENT FIELD; ELECTRON DIFFRACTION PATTERN; HIGH-ORDER LAUE ZONE LINE; HIGHER ORDER LAUE ZONES; LARGE ANGLE CONVERGENT BEAM ELECTRON DIFFRACTIONS; LARGE-ANGLE CONVERGENT-BEAM ELECTRON DIFFRACTION; PHYSICAL PICTURES;

SILICON;

EID: 28244468628     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.2001.00938.x     Document Type: Article

References (6)

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