ALD of YF3 thin films from TiF4 and Y(thd) 3 precursors

Chemical Vapor Deposition

Volumn 15, Issue 1-3, 2009, Pages 27-32

  Pilvi, Tero ^a   Puukilainen, Esa ^a   Munnik, Frans ^b   Leskelä, Markku ^a   Ritala, Mikko ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

ALD; Optical materials; Thin films; YF3

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC NETWORK ANALYSIS; ELECTRIC PROPERTIES; FILM GROWTH; FLUORINE; ORGANIC POLYMERS; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; THIN FILMS; TIN; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS; YTTRIUM; YTTRIUM ALLOYS;

ALD; ATOMIC-FORCE MICROSCOPIES; ATOMIC-LAYER DEPOSITIONS; CAPACITOR STRUCTURES; DEPOSITION TEMPERATURES; ELASTIC RECOIL DETECTION ANALYSIS; ELECTRICAL PROPERTIES; GROWTH CHARACTERISTICS; INDIUM TIN OXIDES; LIGHT TRANSMITTANCES; POLY-CRYSTALLINE; ROOM TEMPERATURES; SEM; TETRAMETHYL; ULTRA VIOLETS; X-RAY DIFFRACTOMETRY; YF3; YTTRIUM FLUORIDES;

OPTICAL FILMS;

EID: 63449128510     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200806721     Document Type: Article

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