Slip length in silicon wafers caused by indentation during heat treatment

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 10, 1998, Pages 5444-5450

  Akatsuka, Masanori ^a   Sueoka, Koji ^a   Katahama, Hisashi ^a   Morimoto, Nobuyuki ^b   Adachi, Naoshi ^b  

^a Sumitomo Metal Industries Ltd   (Japan)

^b SUMCO CORPORATION   (Japan)

Author keywords

Calculation of slip length; Compressive stress; Indentation; Silicon; Slip dislocation; Slip length; Tensile stres; Thermal stress; Wafer

Indexed keywords

BORON; COMPRESSIVE STRESS; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); HEAT TREATMENT; POINT DEFECTS; SEMICONDUCTOR DOPING; TEMPERATURE DISTRIBUTION; TENSILE STRESS; THERMAL EFFECTS; THERMAL STRESS; VICKERS HARDNESS TESTING;

SLIP DISLOCATIONS; X RAY TOPOGRAPHY;

SILICON WAFERS;

EID: 0032181952     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5444     Document Type: Article

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