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Volumn 81, Issue 1, 2001, Pages 145-152

The deformation regimes of the yield point of silicon

Author keywords

[No Author keywords available]

Indexed keywords

DATA REDUCTION; DEFORMATION; DOPING (ADDITIVES); HIGH TEMPERATURE EFFECTS; SILICON; STRAIN;

EID: 0035241141     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418610108216624     Document Type: Article
Times cited : (8)

References (23)
  • 17
    • 85010632476 scopus 로고
    • 1969b, Mater. Sei. Eng., 4, 155; 1970, Physica Status Solidi, 40, 153; 1988, Phil. Mag. Lett., 58, 129; 1999, Properties of Crystalline Silicon, edited by R. Hull (London: INSPEC, The Institution of Electrical Engineers
    • Siethoff, H., 1969a, Acta Metall., 17, 793; 1969b, Mater. Sei. Eng., 4, 155; 1970, Physica Status Solidi, 40, 153; 1988, Phil. Mag. Lett., 58, 129; 1999, Properties of Crystalline Silicon, edited by R. Hull (London: INSPEC, The Institution of Electrical Engineers), pp. 122-135.
    • (1969) Acta Metall. , vol.17 , pp. 122-135
    • Siethoff, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.