Microscopic contact and slip in Si epitaxy

Journal of Crystal Growth

Volumn 280, Issue 1-2, 2005, Pages 16-25

  Wang, Tien Y ^a  

^a M/A COM   (United States)

Author keywords

A1. Defects; A1. Stresses; A3. Chemical vapor deposition processes; B2. Dislocation; B2. Semiconductor silicon; B2. Slip

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECTS; DISSOCIATION; GRAVITATIONAL EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; THERMAL STRESS;

DISLOCATION; POCKET DESIGN; SEMICONDUCTOR SILICON; SLIP; SUSCEPTOR;

MOLECULAR BEAM EPITAXY;

EID: 19944403925     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.055     Document Type: Article

References (13)

1. W.C. Dash H.C. Gatos Properties of Elemental and Compound Semiconductors 1959 Metallurgical Society Boston 195
2. H.R. Huff, and R.C. Bracken R. Haberecht E. Kern Semiconductor Silicon 1969 Electrochemical Society New York 610
3. M. Akatsuka, K. Sueoka, H. Katahama, N. Morimoto, and N. Adachi Jpn. J. Appl. Phys. 37 1998 5444
4. R.H. Nilson, and S.K. Griffiths T. Abe W.M. Bullis S. Kobayashi W. Lin P. Wagner Defects in Silicon III 1999 Electrochemical Society Seattle 119
5. P. Xin H.R. Huff H. Tsuya U. Gosele Semiconductor Silicon 1998 1998 Electrochemical Society San Diego 660
6. J. Bloem, and A.H. Goemans J. Appl. Phys. 43 3 1972 1281
7. McD. Robinson, C.C. Chang, R.B. Marcus, G.A. Rozgonyi, L.E. Katz, and C.L. Paulnack J. Electrochem. Soc. 129 12 1982 2858
8. K. Mokuya, and I. Matsuba IEEE Trans. Electron Dev. 36 2 1989 319
9. T. Wang, and D. Carlson Mater. Res. Soc. Symp. Proc. 795 2004 U5.12
10. T. Wang J. Crystal Growth 273 2005 386
11. S. Timoshenko, and J.N. Goodier Theory of Elasticity 1970 McGraw-Hill Singapore p. 409-414
12. W. Wijaranakula J. Appl. Phys. 72 9 1992 4026
13. W. Wijaranakula J. Electrochem. Soc. 140 11 1993 3306