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Volumn 79, Issue 16, 2001, Pages 2532-2534

A dual-wavelength indium gallium nitride quantum well light emitting diode

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Indexed keywords


EID: 0035886084     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1410345     Document Type: Article
Times cited : (143)

References (8)
  • 7
    • 0039983204 scopus 로고    scopus 로고
    • The 1 μm diameter fluorescent latex microspheres were (a) Fluoresbrite YG microspheres with an excitation maximum at λ = 458nm; emission max, at 512 nm, from Polysciences Inc., Warrington PA, and (b) Trans-Fluospheres carboxylate-modified microspheres with excitation max. 543 nm/emission max. 622 nm, from Molecular Probes Inc., Eugene OR 97402-9165
    • The 1 μm diameter fluorescent latex microspheres were (a) Fluoresbrite YG microspheres with an excitation maximum at λ = 458nm; emission max, at 512 nm, from Polysciences Inc., Warrington PA, and (b) Trans-Fluospheres carboxylate-modified microspheres with excitation max. 543 nm/emission max. 622 nm, from Molecular Probes Inc., Eugene OR 97402-9165.
  • 8
    • 0041170276 scopus 로고    scopus 로고
    • US Patent No. 5,784,157 (July 21, 1998)
    • V. Gorfinkel and S. Luryi, US Patent No. 5,784,157 (July 21, 1998).
    • Gorfinkel, V.1    Luryi, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.