Study of the dominant luminescence mechanism in InGaN/GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

Applied Physics Letters

Volumn 86, Issue 12, 2005, Pages 1-3

  Lai, Yen Lin ^a   Liu, Chuan Pu ^a   Chen, Zheng Quan ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b GENESIS PHOTONICS INC   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; LUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HETEROINTERFACES; ION MILLING; QUANTUM CONFINEMENT EFFECTS; QUASIQUANTUM DOTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 17944383230     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1891291     Document Type: Article

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