Impact of variability on the performance of SOI Schottky barrier MOSFETs

Solid-State Electronics

Volumn 53, Issue 4, 2009, Pages 418-423

  Feste, S F ^a   Zhang, M ^a   Knoch, J ^b   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

Dopant segregation; Schottky barrier MOSFET; Threshold voltage; Variability

Indexed keywords

ELECTROSTATIC DEVICES; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); THRESHOLD VOLTAGE;

CARRIER INJECTIONS; DOPANT SEGREGATION; ELECTRICAL CHARACTERISTICS; ELECTROSTATIC GATES; INHOMOGENEITY; MOSFETS; MULTI-GATE DEVICES; ON CURRENTS; SCHOTTKY BARRIER MOSFET; SCHOTTKY BARRIER MOSFETS; SCHOTTKY BARRIERS; SILICIDATION; SILICON ON INSULATORS; SOI THICKNESS; SOURCES OF VARIABILITIES; VARIABILITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 62849100806     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.09.019     Document Type: Article

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