High performance RF power MOSFET

Electronics Letters

Volumn 38, Issue 21, 2002, Pages 1286-1288

  Pathirana, G P V ^a   Udrea, F ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC POWER SYSTEMS; LEAKAGE CURRENTS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

GATE VOLTAGES;

MOSFET DEVICES;

EID: 0037057254     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020859     Document Type: Article

References (6)

1. Xu, S., Foo, P., Wen, J., Liu, Y., Lin, F., and Ren, C.: 'LDMOS with extreme low parasitic capacitance and high hot-carrier immunity', IEDM Tech. Dig., 1999, pp. 201-204.
2. Cai, J., Ren, C., Balasubramanian, N., and Sin, J.K.O.: 'High performance stacked LDD RF LDMOSFET'. ISPSD'2001, Osaka, Japan, 2001 pp. 103-106.
3. Shindo, M., Morikawa, M., Fujioka, T., Nagura, K., and Kurotani, K.: 'High power LDMOS for cellular base station applications'. ISPSD'2001, Osaka, Japan, 2001, pp. 107-110.
4. Udrea, F., Garner, D., Sheng, K., Popescu, A., Lim, H.T., and Milne, W.I.: 'SOI power devices', Electron. Commun. Eng. J., 2000, pp. 27-40.
5. Ng, R., Udrea, F., Sheng, K., Ueno, K., Amaratunga, G.A., and Nishiura, M.: 'Lateral unbalanced super junction (USJ)/3D-RESURF for high breakdown voltage on SOI'. ISPSD'2001, Osaka, Japan, 2001 pp. 395-398.
6. Ludikhuize, A.W.: 'A review of RESURF technology'. ISPSD'2000, Toulouse, France, 2000, pp. 11-18.