Growth of hexagonal GaN films on the nitridated β-Ga2O 3 substrates using RF-MBE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2306-2309

  Ohira, S ^a   Suzuki, N ^a   Minami, H ^b   Takahashi, K ^b   Araki, T ^b   Nanishi, Y ^b  

^a Nippon Light Metal Company Ltd   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAN FILMS; NITRIDE SEMICONDUCTORS;

CRYSTALS; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; NITRIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

SEMICONDUCTOR GROWTH;

EID: 44249093539     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674877     Document Type: Conference Paper

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