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Applied Physics Letters

Volumn 80, Issue 5, 2002, Pages 853-855

Diode and transistor behaviors of three-terminal ballistic junctions

(1) Xu, H Q a

a LUND UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC MATERIALS; HIGH QUALITY; NEW APPLICATIONS; OUTPUT VOLTAGES; POSITIVE VALUE; SATURATION LEVELS; SUB-100 NM; THREE-BRANCH; THREE-TERMINAL BALLISTIC JUNCTIONS;

BALLISTICS; DIODES;

ELECTRIC GROUNDING;

EID: 79956021220 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1447316 Document Type: Article

Times cited : (76)

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