GaN light-emitting diode with monolithically integrated photonic crystals and angled sidewall deflectors for efficient surface emission

Applied Physics Letters

Volumn 94, Issue 10, 2009, Pages

  Lee, Joonhee ^a   Ahn, Sungmo ^a   Kim, Sihan ^a   Kim, Dong Uk ^a   Jeon, Heonsu ^a   Lee, Seung Jae ^b   Baek, Jong Hyeob ^b  

^a Seoul National University   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CRYSTAL ATOMIC STRUCTURE; CURRENT DENSITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HOLOGRAPHIC INTERFEROMETRY; LASER RECORDING; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM; SILICON ON INSULATOR TECHNOLOGY; TWO DIMENSIONAL;

EFFICIENT SURFACES; EMISSION INTENSITIES; GAN LIGHT-EMITTING DIODES; LASER HOLOGRAPHIES; LED STRUCTURES; MESA SIDEWALLS; MONOLITHICALLY INTEGRATED; NORMAL DIRECTIONS; SAPPHIRE SUBSTRATES; SURFACE EMISSIONS; TWO-DIMENSIONAL PHOTONIC CRYSTALS;

PHOTONIC CRYSTALS;

EID: 62549113073     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3095495     Document Type: Article

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