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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2169-2173

Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

(7) Lee, Jae Hoon a Oh, Jeong Tak a Park, Jin Sub a Kim, Je Won a Kim, Yong Chun a Lee, Jeong Wook b Cho, Hyung Koun c

a Samsung Electro Mechanics (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CORRUGATED INTERFACES; DISLOCATION DENSITY; HEMISPHERICAL PATTERNED SAPPHIRE (HPS); LUMINOUS INTENSITY; 68.37.PS; 78.60.FI; 81.15.GH; 85.60.JB; EXTERNAL QUANTUM EFFICIENCY; EXTRACTION EFFICIENCIES; TOTAL INTERNAL REFLECTIONS;

DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); LIGHT REFLECTION; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; FILM GROWTH; LUMINANCE; REFRACTIVE INDEX;

LIGHT EMITTING DIODES;

EID: 33746324812 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565308 Document Type: Conference Paper

Times cited : (54)

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