Demonstration of the first power IC on 4H-SiC

2007 International Semiconductor Device Research Symposium, ISDRS

Volumn , Issue , 2007, Pages

  Zhao, J H ^a   Zhang, Y ^a   Su, M ^a   Sheng, K ^a   Alexandrov, P ^b   Fursin, L ^b  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44949124631     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2007.4422416     Document Type: Conference Paper

References (3)

1. 2 Normally-Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuits Application' IEEE Electron Device Lett., Vol. 28, No. 5, 2006, pp.404-407
2. K. Sheng, et. al., 'Design Criteria of High-Voltage Lateral RESURF JFETs on 4H-SiC IEEE Trans. Electron Devices, Vol. 52, No. 10, 2005, pp. 2300-2308
3. J. Zhao, et. al., 'Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs' Material Science Forum, Vols. 527-529, 2006, pp. 1191-1194