AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 1114-1117

  Tang, Jian ^a,b   Wang, Xiaoliang ^a,b   Chen, Tangsheng ^c   Xiao, Hongling ^a,b   Ran, Junxue ^a,b   Zhang, Minglan ^a,b   Hu, Guoxin ^a,b   Feng, Chun ^a,b   Hou, Qifeng ^a,b   Wei, Meng ^a,b   Li, Jinmin ^a,b   Wang, Zhanguo ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c NANJING ELECTRONIC DEVICES INSTITUTE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; CURRENT GAINS; DH-HEMTS; DOUBLE HETEROJUNCTIONS; EXTRINSIC TRANSCONDUCTANCES; HIGH ELECTRON MOBILITIES; MAXIMUM DRAIN CURRENTS; MAXIMUM FREQUENCY OF OSCILLATIONS; MOCVD; ROOT-MEAN-SQUARE ROUGHNESS; SAPPHIRE SUBSTRATES; SCAN AREAS; SHEET CARRIER DENSITIES;

CHEMICAL VAPOR DEPOSITION; CORUNDUM; CUTOFF FREQUENCY; DRAIN CURRENT; ELECTRIC RESISTANCE; ELECTRON MOBILITY; INTEGRATED CIRCUITS; PHOTORESISTS; SURFACE STRUCTURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 60749136384     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734732     Document Type: Conference Paper

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