Formation of heavily P-doped Si epitaxial film on Si(1 0 0) by multiple atomic-layer doping technique

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 202-205

  Shimamune, Yosuke ^a   Sakuraba, Masao ^a   Murota, Junichi ^a   Tillack, Bernd ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b IHP   (Germany)

Author keywords

Chemical vapor deposition; P doping; PH 3; Si epitaxial growth; SiH 4

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DOPING (ADDITIVES); EPITAXIAL GROWTH; EXTRAPOLATION; HEAT TREATMENT; PHOSPHORUS COMPOUNDS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON WAFERS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

P DOPING; SI EPITAXIAL GROWTH;

SILICON COMPOUNDS;

EID: 1142268143     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.033     Document Type: Conference Paper

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