Atomic scale observation and characterization of redox-induced interfacial layers in commercial Si thin film photovoltaics

Journal of Applied Physics

Volumn 105, Issue 3, 2009, Pages

  Ramasse, Quentin ^a   Anapolsky, Abraham ^b   Lazik, Christopher ^b   Jin, Miao ^b   Armstrong, Karl ^b   Wang, Dapeng ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; CARBON NANOTUBES; DEPTH PROFILING; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; INTERFACIAL ENERGY; REDOX REACTIONS; SCANNING; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES; SOLAR ENERGY; THIN FILM DEVICES; THIN FILMS; TIN; TRANSMISSION ELECTRON MICROSCOPY; ZINC;

ANNEALING TREATMENTS; ATOMIC RESOLUTIONS; ATOMIC SCALE; DEVICE EFFICIENCIES; ENERGY-LOSS SPECTROSCOPIES; EXPERIMENTAL EVIDENCES; INTERFACIAL LAYERS; OXIDIZED SILICONS; SILICON LAYERS; THIN FILM SOLAR CELLS; THIN-FILM PHOTOVOLTAICS; TRANSPARENT CONDUCTIVE OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 60449102628     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3074309     Document Type: Article

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