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Physica B: Condensed Matter

Volumn 245, Issue 4, 1998, Pages 306-310

Microcrystallinity at SiO2/Si(0 0 1) interfaces: An effect of annealing

(5) Takahashi, Isao a Okita, Syougo a Awaji, Naoki b Sugita, Yoshihiro b Komiya, Satoshi b

a KWANSEI GAKUIN UNIVERSITY (Japan)

b FUJITSU LABORATORIES LTD (Japan)

Author keywords

SiO2 Si(1 0 0) interface structure; X ray CTR scattering; X ray reflectivity

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL ORIENTATION; ELECTROMAGNETIC WAVE REFLECTION; ELECTROMAGNETIC WAVE SCATTERING; INTERFACES (MATERIALS); LATTICE CONSTANTS; SILICA; SILICON WAFERS; THERMAL EFFECTS; ULTRATHIN FILMS; X RAYS;

DIFFERENCE X RAY REFLECTIVITY (DXR) ANALYSIS; X RAY CRYSTAL TRUNCATION ROD (CTR) SCATTERING;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 0032045453 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(97)00897-1 Document Type: Article

Times cited : (15)

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