Interfacial stability of an indium tin oxide thin film deposited on Si and Si0.85Ge0.15

Journal of Applied Physics

Volumn 88, Issue 6, 2000, Pages 3717-3724

  Ow Yang, Cleva W ^a,d   Shigesato, Yuzo ^b   Paine, David C ^c  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

^c BROWN UNIVERSITY   (United States)

^d SDL INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000974740     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1288694     Document Type: Article

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