Direct evidence for selective impurity incorporation at the crystal domain boundaries in epitaxial ZnO layers

Applied Physics Letters

Volumn 85, Issue 11, 2004, Pages 1976-1978

  Bertram, F ^a   Forster, D ^a   Christen, J ^a   Oleynik, N ^a   Dadgar, A ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CATHODOLUMINESCENCE; GRAIN BOUNDARIES; IMPURITIES; MAPPING; METALLORGANIC VAPOR PHASE EPITAXY; MONOCHROMATORS; SCANNING ELECTRON MICROSCOPY;

CRYSTAL DOMAIN BOUNDARIES; EPITAXIAL LAYERS; STRAIN RELAXATION; STRUCTURAL PROPERTIES;

ZINC COMPOUNDS;

EID: 5444237487     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1791746     Document Type: Article

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