Effects of excimer laser dopant activation on low temperature polysilicon thin-film transistors with lightly doped drains

Electrochemical and Solid-State Letters

Volumn 4, Issue 11, 2001, Pages

  Tseng, Chang Ho ^a   Lin, Ching Wei ^a   Chang, Ting Kuo ^a   Cheng, Huang Chung ^a   Chin, Albert ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ELECTRIC CURRENTS; EXCIMER LASERS; ION IMPLANTATION; LEAKAGE CURRENTS; PHOSPHORUS; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

EXCIMER LASER ANNEALING; EXCIMER LASER DOPANT ACTIVATION; HIGH FIELD EFFECT MOBILITY; LIGHTLY DOPED DRAIN STRUCTURES; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE POLYSILICON THIN FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 0035525667     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1405997     Document Type: Article

References (8)