High temperature crystallized poly-Si on Mo substrates for TFT application

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 303-308

  Park, Joong Hyun ^a   Kim, Do Young ^a   Ko, Jae Kyung ^a   Chakrabarty, K ^b   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

^b Photon Semiconductor and Energy Company   (South Korea)

Author keywords

Crystallization; High temperature; Poly Si; Rapid thermal annealing; TFTs

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CRYSTALLIZATION; FLAT PANEL DISPLAYS; HIGH TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; RAPID THERMAL ANNEALING;

FIELD EFFECT MOBILITY;

THIN FILM TRANSISTORS;

EID: 0037416736     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01156-2     Document Type: Conference Paper

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