Numerical modeling of silicon carbide epitaxy in a horizontal hot-wall reactor

Journal of Crystal Growth

Volumn 303, Issue 1 SPEC. ISS., 2007, Pages 334-336

  Nishizawa, Shin ichi ^a   Pons, Michel ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b CNRS   (France)

Author keywords

A1. Deposition; A1. Doping; A1. Etching; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting silicon compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

DOPING FEATURES; GROWTH FEATURE; HOT WALL EPITAXY; TERMINATED SURFACES;

EPITAXIAL GROWTH;

EID: 34147142516     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.018     Document Type: Article

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