Effect of heat transfer on macroscopic and microscopic crystal quality in silicon carbide sublimation growth

Journal of Crystal Growth

Volumn 303, Issue 1 SPEC. ISS., 2007, Pages 342-344

  Nishizawa, Shin ichi ^a   Kato, Tomohisa ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Computer simulation; A1. Heat transfer; A2. Growth from vapor; A2. Single crystal growth; B2. Semiconducting silicon compounds

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); HEAT TRANSFER; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SINGLE CRYSTALS; TEMPERATURE DISTRIBUTION;

CRYSTAL QUALITY; GROWTH FROM VAPOR; SINGLE CRYSTAL GROWTH; SUBLIMATION GROWTH;

CRYSTAL GROWTH;

EID: 34047270211     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.022     Document Type: Article

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