SCOPUS 정보 검색 플랫폼

Volumn 911, Issue , 2006, Pages 29-34

Effect of radiation in solid during SiC sublimation growth

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED RADIATION; LIGHT ABSORPTION; NUMERICAL ANALYSIS; SEMICONDUCTOR GROWTH; SUBLIMATION; TEMPERATURE DISTRIBUTION; THERMAL STRESS;

ABSORPTION COEFFICIENT; DOPING CONCENTRATION; INFRARED ABSORPTION; TEMPERATURE GRADIENT;

SILICON CARBIDE;

EID: 33750409029 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-0911-b01-02 Document Type: Conference Paper

Times cited : (1)

References (9)

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