RF noise of 65-nm MOSFETs in the weak-to-moderate-inversion region

IEEE Electron Device Letters

Volumn 30, Issue 2, 2009, Pages 185-188

  Shi, Jinglin ^a   Xiong, Yong Zhong ^a   Kang, Kai ^a   Nan, Lan ^a,b   Lin, Fujiang ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

65 nm; CMOS; Low power; Low voltage; Moderate inversion; MOSFET; RF noise; Weak inversion

Indexed keywords

DRAIN CURRENT; TRANSISTORS;

65 NM; CMOS; LOW-POWER; LOW-VOLTAGE; MODERATE INVERSION; MOSFET; RF NOISE; WEAK INVERSION;

MOSFET DEVICES;

EID: 59649127035     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2010464     Document Type: Article

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