Impact of downscaling and poly-gate depletion on the RF noise parameters of advanced nMOS transistors

IEEE Transactions on Electron Devices

Volumn 53, Issue 1, 2006, Pages 153-156

  Nuttinck, Sebastien ^a   Scholten, Andries J ^a   Tiemeijer, Luuk F ^a   Cubaynes, Florence ^a   Dachs, Charles ^a   Detcheverry, Celine ^a   Hijzen, Erwin A ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Gate depletion; NMOS; RF noise

Indexed keywords

COMPUTER SIMULATION; PARAMETER ESTIMATION; PHASE NOISE; TRANSISTORS;

GATE DEPLETION; NOISE MATCHING; RF NOISE;

CMOS INTEGRATED CIRCUITS;

EID: 33645746181     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.861246     Document Type: Article

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