Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors

2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

Volumn , Issue , 2004, Pages 115-118

  Jagannathan, B ^a   Greenberg, D ^a   Sanderson, D I ^a   Rieh, J S ^a   Pekarik, J ^a   Plouchart, J O ^a   Freeman, G ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

CMOS; FMAX; FT; Germanium; HBT; NF; nFET; Power; Silicon

Indexed keywords

BANDWIDTH; ELECTRIC POTENTIAL; ELECTRIC POWER UTILIZATION; FIELD EFFECT TRANSISTORS; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; SILICON;

FMAX; FT; N FIELD EFFECT TRANSISTOR (NFET); NF; POWER CIRCUIT;

CMOS INTEGRATED CIRCUITS;

EID: 20344373637     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Zamdmer et al, VLSI Conf., 2004. (Accepted)
2. Rieh et al, InP & Related Mat. Conf., pp. 374, 2003.
3. Jagannathan et al, Electron Dev. Lett., pp. 258, 2002.
4. Pekarik et al, CICC Conf., 2004. (Accepted)
5. Zeijl et al, JSSC, pp. 1679, 2002.
6. Muhammad et al, ISSCC Conf. Dig., pp. 268, 2004.
7. Sidiropoulos et al, ISSCC Conf. Dig., pp. 168, 2004.