A fully monolithic 260-μ, 1-GHz subthreshold low noise amplifier

IEEE Microwave and Wireless Components Letters

Volumn 15, Issue 6, 2005, Pages 428-430

  Perumana, Bevin George ^a   Chakraborty, Sudipto ^a,b   Lee, Chang Ho ^a   Laskar, Joy ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Low noise amplifier (LNA); Metal oxide semiconductor field effect transistors (MOSFETs); Micro power circuits; Weak inversion

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRIC INDUCTORS; ELECTRIC POTENTIAL; HARMONIC GENERATION; MOSFET DEVICES; SENSORS; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

LOW-NOISE AMPLIFIERS (LNA); MICRO-POWER CIRCUITS; NOISE FIGURE; WEAK-INVERSION;

POWER AMPLIFIERS;

EID: 22344457142     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2005.850563     Document Type: Article

References (4)

1. T.-H. Lin, H. Sanchez, R. Rofougaran, and W. J. Kaiser, "CMOS front end components for micropower RF wireless systems," in Proc. Int. Symp. Low Power Electronics Design, Aug. 10-12, 1998, pp. 11-15.
2. A. Zolfaghari and B. Razavi, "A low-power 2.4-GHz transmitter/receiver CMOS IC," IEEE J. Solid-State Circuits, vol. 38, no. 2, pp. 176-183, Feb. 2003.
3. R. Rofougaran, T.-H. Lin, F. Newberg, and W. J. Kaiser, "A micro-power CMOS RF front-end for embedded wireless devices," in Proc. IEEE Radio Frequency Integrated Circuits (RFIC) Symp., Jun. 13-15, 1999, pp. 17-20.
4. K.-H. To, Y.-B. Park, T. Rainer, W. Brown, and M. W. Huang, "High frequency noise characteristics of RF MOSFETs in subthreshold region," in Proc. IEEE Radio Frequency Integrated Circuits (RFIC) Svmp., Jun. 8-10, 2003, pp. 163-166.