Noise performance of 90 nm CMOS technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2004, Pages 17-20

  Becher, David ^a   Banerjee, Gaurab ^a   Basco, Ricardo ^a   Hung, Celia ^a   Kuhn, Kelin ^a   Shih, Wei Kai ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAIN; DIGITAL CIRCUITRY; DRAIN REGIONS; NOISE PARAMETERS;

COPPER; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; NATURAL FREQUENCIES; SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; SUBSTRATES; TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 4444343260     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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3. F. Chai, R. Reuter, T. Baker, D. Zupac, and J. Kirchgessner, "Outstanding noise characteristics of SiGe:C HBT allow flexibility in high-frequency RF designs," 2003 IEEE Microwave Theory and Techniques Society Digest, pp. 151-154, June 2003.
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7. H. Fukui, "Optimal noise figure of microwave GaAs MESFET's," IEEE Trans. Elect. Devices, vol. 26, pp. 1032-1037, 1979.