Chemical etching of {111} surfaces of GaAs crystals in H2SO4-H2O2-H2O system

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 12, 2001, Pages 6792-6796

  Sugawara, Shigeo ^a   Saito, Kaichi ^a   Yamauchi, Jin ^a   Shoji, Masako ^a  

^a AKITA UNIVERSITY   (Japan)

Author keywords

Chemical polishing; Dislocation etch pit; Etching; Gallium arsenide; Optical microscopy; Single crystal; Sulfuric acid hydrogen peroxide solution

Indexed keywords

CHEMICAL POLISHING; COMPOSITION EFFECTS; ETCHING; HYDROGEN PEROXIDE; MATERIALS TESTING; OPTICAL MICROSCOPY; SINGLE CRYSTALS; SOLUTIONS; SULFURIC ACID; SURFACES; THERMAL EFFECTS; WATER;

CHEMICAL ETCHING; DOUBLE ETCHING TEST; ETCHANT; VOLUME RATIO;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035713468     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6792     Document Type: Article

References (5)