Characterization of Pr2O3 added metals/GaAs Schottky diodes using X-ray photoelectron spectroscopy

Crystal Research and Technology

Volumn 34, Issue 8, 1999, Pages 1017-1021

  Wang, Hung Thung ^a   Chang, Liann Be ^a   Cheng, Yi Chang ^a   Lin, Yin Kwang ^b   Hsu, Chung I G ^b  

^a NATIONAL DEFENSE UNIVERSITY   (Taiwan)

^b DA YEH UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; GOLD; LIQUID PHASE EPITAXY; NICKEL; PLATINUM; PRASEODYMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SILVER; SURFACE CHEMISTRY; SURFACE STRUCTURE;

IDEALITY FACTOR; PRASEODYMIUM OXIDE; SCHOTTKY BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 0032594455     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-4079(199909)34:8<1017::AID-CRAT1017>3.0.CO;2-N     Document Type: Article

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