Thermal stability and electronic structure of hafnium and zirconium oxide films for nanoscale MOS device applications

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Volumn , Issue , 2004, Pages 56-60

  Wong, Hei ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); PERMITTIVITY; SILICON; THERMODYNAMIC STABILITY; ZIRCONIUM COMPOUNDS;

GATE DIELECTRICS; PHYSICAL THICKNESS; SILICON GATE OXIDE; TECHNOLOGICAL LIMIT;

MOSFET DEVICES;

EID: 28444478684     PISSN: 15416275     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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