Effect of fluorine on interface characteristics in low-temperature CMIS process with HfO2 metal gate stacks

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2252-2256

  Sasaki, Takaoki ^a,b   Akasaka, Yasushi ^a   Miyagawa, Kazuhiro ^a   Hoshi, Takeshi ^a   Watanabe, Yasuhiko ^a   Ootsuka, Fumio ^a   Yasuhira, Mitsuo ^a   Arikado, Tsunetoshi ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

F2 gas annealing; Fluorine; Interface states; Metal gate; Negative bias temperature instability

Indexed keywords

ANNEALING; CHARGE COUPLED DEVICES; DIELECTRIC MATERIALS; FERMI LEVEL; FLUORINE; GATES (TRANSISTOR); LOW TEMPERATURE EFFECTS; MOSFET DEVICES;

F2 GAS ANNEALING; INTERFACE STATES; METAL GATE; NEGATIVE BIAS TEMPERATURE INSTABILITY;

INTERFACES (MATERIALS);

EID: 21244467891     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2252     Document Type: Conference Paper

References (5)

1. C. Hobbs et al.: Symp. VLSI Technology (2003) p. 9.
2. B. Gulliaumot et al.: Int. Electron Devices Meet. Tech. Dig. (2002) p. 355.
3. A. Yagishita, T. Saito, K. Nakajima, S. Inumiya, Y. Akasaka, Y. Ozawa, O. Minamihaba, H. Yano, K. Hieda, K. Suguro, T. Arikado and K. Okumura: Int. Electron Devices Meet. Tech. Dig. (1998) p. 785.
4. T. Sasaki, F. Ootsuka, H. Ozaki, T. Hoshi, M. Tomikawa, M. Yasuhira and T. Arikado: Jpn. J. Appl. Phys. 43 (2004) 1837.
5. T. H. Hou, M. F. Wang, K. L. Mai, Y. M. Lin, M. H. Yang, L. G. Yao, Y. Jin, S. C. Chen and M. S. Liang: International Reliability Physics Symposium (2004) p. 581.