Gallium nitride (GaN) HEMT's: Progress and potential for commercial applications

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2002, Pages 243-246

  Shealy, J ^a   Smart, J ^a   Poulton, M ^a   Sadler, R ^a   Grider, D ^a   Gibb, S ^a   Hosse, B ^a   Sousa, B ^a   Halchin, D ^a   Steel, V ^a   Garber, P ^a   Wilkerson, P ^a   Zaroff, B ^a   Dick, J ^a   Mercier, T ^a   Bonaker, J ^a   Hamilton, M ^a   Greer, C ^a   Isenhour, M ^a  

^a RF MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND NETWORKS; ELECTRIC DISCHARGES; GALLIUM NITRIDE; INDUSTRIAL APPLICATIONS; OSCILLATORS (ELECTRONIC); POWER AMPLIFIERS; SILICON ON SAPPHIRE TECHNOLOGY; SWITCHES;

RADIO FREQUENCY MICRO DEVICES (RFMD);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036437953     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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3. J.W. Palmour et al., IEDM 2001, 01-385.
4. E.M. Chumbes et al., IEEE Trans. Electron Devices, 48, pp. 420-426.
5. P. Javorka et al., IEEE EDL, Vol. 23, No. 1, Jan. 2002.
6. J.A. Smart et al., Apply Physics Lett., 75 (1), 388-390, 19 July 1999.
7. Marso et al., IEEE MTT-S IMS Workshop, Seattle Washington, June 2002.
8. W.L. Pribble et al., IEEE MTT-S IMS Workshop, Seattle Washington, June 2002.
9. Y. Ando et al., IEDM 2001, 01-381.
10. J.B. Shealy et al., IEEE MTT-S, June 2001, pp. 1427-1430.