Back-gate effect on coulomb blockade in silicon-on-insulator trench wires

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 10, 2005, Pages 7717-7719

  Nishiguchi, Katsuhiko ^a   Crauste, Olivier ^b   Namatsu, Hideo ^a   Horiguchi, Seiji ^c   Ono, Yukinori ^a   Fujiwara, Akira ^a   Takahashi, Yasuo ^d   Inokawa, Hiroshi ^a  

^a NTT Basic Research Laboratories   (Japan)

^b PSL RESEARCH UNIVERSITY   (France)

^c AKITA UNIVERSITY   (Japan)

^d HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Back gate voltage; Silicon on insulator; Single electron devices

Indexed keywords

CAPACITANCE; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

BACK-GATE EFFECT; SILICON-ON-INSULATOR (SOI) NANOWIRE; SINGLE-ELECTRON DEVICES;

COULOMB BLOCKADE;

EID: 31544449141     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7717     Document Type: Article

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