Analysis of back-gate voltage dependence of threshold voltage of thin silicon-on-insulator metal-oxide-semiconductor field-effect transistor and its application to Si single-electron transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2036-2040

  Horiguchi, Seiji ^a,b   Fujiwara, Akira ^a   Inokawa, Hiroshi ^a   Takahashi, Yasuo ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b AKITA UNIVERSITY   (Japan)

Author keywords

Back gate voltage; Metal oxide semiconductor field effect transistor (MOSFET); Silicon; Sillcon on insulator (SOI); Single electron transistor (SET); Threshold voltage

Indexed keywords

APPROXIMATION THEORY; CHANNEL CAPACITY; COUPLED CIRCUITS; FIELD EFFECT TRANSISTORS; MOS DEVICES; POISSON DISTRIBUTION; SILICON; SILICON ON INSULATOR TECHNOLOGY; THICKNESS CONTROL; VARIATIONAL TECHNIQUES;

BACK-GATE VOLTAGE; METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOT (MOSFET); SINGLE-ELECTRON TRANSISTOR; WAVE FUNCTIONS;

THRESHOLD VOLTAGE;

EID: 3142573081     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2036     Document Type: Conference Paper

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