Infrared detection with silicon nano-field-effect transistors

Applied Physics Letters

Volumn 90, Issue 22, 2007, Pages

  Nishiguchi, K ^a   Ono, Y ^a   Fujiwara, A ^a   Yamaguchi, H ^a   Inokawa, H ^b   Takahashi, Y ^c  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ELECTROMETERS; ENERGY BARRIERS; INFRARED DETECTORS; INFRARED RADIATION; SILICON;

CUTOFF WAVELENGTHS; INFRARED DETECTION; STORAGE NODES;

MOSFET DEVICES;

EID: 34249894702     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2744488     Document Type: Article

References (16)

1. F. L. J. Sangster and K. Teer, IEEE J. Solid-State Circuits 3, 131 (1969).
2. W. S. Boyle and G. E. Smith, IEEE Trans. Electron Devices 23, 661 (1976).
3. C. Kim and R. H. Dyck, Proc. IEEE 61, 1146 (1973).
4. O. Yadid-Pecht, R. Ginosar, and Y. S. Diamand, IEEE Trans. Electron Devices 38, 1772 (1991).
5. J. Masek, A. Ishida, H. Zogg, C. Maissen, and S. Blunier, IEEE Electron Device Lett. 11, 12 (1990).
6. R. A. Soref, J. Appl. Phys. 38, 5201 (1967).
7. R. A. Soref, IEEE Trans. Electron Devices 15, 209 (1968).
8. H. B. Bebb and R. A. Chapman, J. Phys. Chem. Solids 28, 2087 (1967).
9. B. E. Cole, R. E. Higashi, and R. A. Wood, Proc. IEEE 86, 1679 (1998).
10. K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi, Appl. Phys. Lett. 85, 1277 (2004).
11. K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi, Appl. Phys. Lett. 88, 183101 (2006).
12. Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, and K. Murase, Jpn. J. Appl. Phys., Part 1 38, 2457 (1999).
13. O. Astafiev, S. Komiyama, and T. Kutsuwa, Appl. Phys. Lett. 79, 1199 (2001).
14. K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi, IEEE Electron Device Lett. 28, 48 (2007).
15. H. F. Wolf, Silicon Semiconductor Data (Pergamon, Oxford, 1969), Vol. 9, p. 112.
16. O. Astafiev, S. Komiyama, T. Kutsuwa, V. Antonov, Y. Kawaguchi, and K. Hirakawa, Appl. Phys. Lett. 80, 4250 (2002).