Real-time observation of single-electron movement through silicon single-electron transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 10, 2004, Pages 6863-6867

  Kim, Sang Jin ^a,b   Ono, Yukinori ^a   Takahashi, Yasuo ^a   Choi, Jung Bum ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b Chungbuk National University   (South Korea)

Author keywords

Electrometer; MOSFET; Nanotechnology; Silicon on insulator; Single electron transistor

Indexed keywords

CAPACITANCE; CHARGE TRANSFER; ELECTROMETERS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; GATES (TRANSISTOR); MOSFET DEVICES; NANOTECHNOLOGY; OXIDATION; POTENTIAL ENERGY; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

CHARGE DETECTORS; SINGLE-CHARGE TRANSFER DEVICES; SINGLE-ELECTRON TRANSISTOR (SET); TUNNELING DYNAMICS;

SILICON;

EID: 10844287048     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.6863     Document Type: Article

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