Studies on metal-oxide-semiconductor field-effect transistor low-frequency noise for electrometer applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3606-3608

  Clement, Nicolas ^a,b   Inokawa, Hiroshi ^a,c   Ono, Yukinori ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b INSTITUT D ELECTRONIQUE   (France)

^c SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Electrometer; Low frequency noise; Metal oxide semiconductor field effect transistor (MOSFET); Random telegraph signal (RTS); Silicon

Indexed keywords

ELECTROMETERS; NOISE ABATEMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SPECTRUM ANALYSIS;

LORENTZIAN SPECTRUM; LOW FREQUENCY NOISE; SPECTRAL DENSITY; SURFACE-CHANNEL CONDITION;

MOSFET DEVICES;

EID: 33646932132     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3606     Document Type: Article

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