Correlation between nitrogen and carbon incorporation into MOVPE ZnO at various oxidizing conditions

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 232-235

  Zhu, J J ^a   Vines, L ^a   Aaltonen, T ^a   Kuznetsov, A Yu ^a  

^a UNIVERSITY OF OSLO   (Norway)

Author keywords

Defect complexes; Doping; MOVPE; ZnO

Indexed keywords

CRYSTAL GROWTH; DEPTH PROFILING; DOPING (ADDITIVES); HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; MASS SPECTROMETRY; NITROGEN; ORGANOMETALLICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SULFUR COMPOUNDS; ZINC OXIDE;

COMPLEXING; DEFECT COMPLEXES; DOPING; ION MASS SPECTROMETRY; MOVPE; NITROGEN-DOPED; SILICON (111) SUBSTRATES; VAPOR PHASE; ZNO; ZNO FILMS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 58749093748     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.07.042     Document Type: Article

References (19)

1. Ryu Y.R., Lee T.S., and White H.W. Appl. Phys. Lett. 83 (2003) 87
2. Tsukazaki A., Ohtomo A., Onuma T., Ohtani M., Makino T., Sumiya M., Ohtani K., Chichibu S.F., Fuke S., Segawa Y., Ohno H., Koinuma H., and Kawasaki M. Nat. Mater. 4 (2005) 42
3. Hwang D.K., Oh M.S., Lim J.H., and Park S.J. J. Phys. D 40 (2007) 387
4. Look D.C., and Claflin B. Phys. Stat. Sol. B 241 (2004) 624
5. Park C.H., Zhang S.B., and Wei S.H. Phys. Rev. B 66 (2002) 73202
6. Yan Y.F., Zhang S.B., and Pantelides S.T. Phys. Rev. Lett. 86 (2001) 5723
7. Perkins C.L., Lee S.H., Li X.N., Asher S.E., and Coutts T.J. J. Appl. Phys. 97 (2005) 034907
8. Li X.N., Keyes B., Asher S., Zhang S.B., Wei S.H., Coutts T.J., Limpijumnong S., and Van de Walle C.G. Appl. Phys. Lett. 86 (2005) 122107
9. Borseth T.M., Tuomisto F., Christensen J.S., Monakhov E.V., Svensson B.G., and Kuznetsov A.Yu. Phys. Rev. B 77 (2008) 45204
10. Triboulet R., and Perriere J. Prog. Cryst. Growth Charact. Mater. 47 (2003) 65
11. Volintiru I., Creatore M., Helvoort W.H.V., Linden J.L., and Sanden M.C.M.V. Appl. Phys. Lett. 89 (2006) 022110
12. Li X.N., Asher S.E., Limpijumnong S., Keyes B.M., Perkins C.L., Barnes T.M., Moutinho H.R., Luther J.M., Zhang S.B., Wei S.H., and Coutts T.J. J. Cryst. Growth 287 (2006) 94
13. Li X.N., Asher S.E., Limpijumnong S., Zhang S.B., Wei S.H., Barnes T.M., Coutts T.J., and Noufi R. J. Vac. Sci. Technol. A 24 (2006) 1213
14. Dai J.N., Su H.B., Wang L., Pu Y., Fang W.Q., and Jiang F.Y. J. Cryst. Growth 290 (2006) 426
15. Look D.C., Mosbacker H.L., Strzhemechny Y.M., and Brillson L.J. Superlatt. Microstruct. 38 (2005) 406
16. Hahn B., Heindel G., Schoberer E.P., and Gebhardt W. Semicond. Sci. Technol. 13 (1998) 788
17. Maejima K., and Fujita S. J. Cryst. Growth 293 (2006) 305
18. Tan S.T., Sun X.W., Yu Z.G., Wu P., Lo G.Q., and Kwong D.L. Appl. Phys. Lett. 91 (2007) 072101
19. Limpijumnong S., Li X.N., Wei S.H., and Zhang S.B. Appl. Phys. Lett. 86 (2005) 211910