Comparison of CdZnTe crystals grown by the Bridgman method under Te-rich and Te-stoichiometric conditions and the annealing effects

Journal of Crystal Growth

Volumn 311, Issue 2, 2009, Pages 286-291

  Zhang, Xiaowen ^a   Zhao, Zenglin ^a   Zhang, Pengju ^a   Ji, Rongbin ^a   Li, Quanbao ^a  

^a KUNMING INSTITUTE OF PHYSICS   (China)

Author keywords

A2. Bridgman technique; A2. Growth from melt; A2. Single crystal growth; B1.Cadmium compounds; B2. Semiconducting II VI materials

Indexed keywords

ANNEALING; CADMIUM; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTAL GROWTH; CRYSTALLIZATION; GRAIN BOUNDARIES; GROWTH (MATERIALS); INFRARED TRANSMISSION; PRECIPITATES; RADIATION DETECTORS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; VEGETATION; Z TRANSFORMS;

A2. BRIDGMAN TECHNIQUE; A2. GROWTH FROM MELT; A2. SINGLE CRYSTAL GROWTH; B1.CADMIUM COMPOUNDS; B2. SEMICONDUCTING II-VI MATERIALS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 58549100456     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.109     Document Type: Article

References (29)

1. Gawron W., and Rogalski A. Infrared Phys. Technol. 43 (2002) 157
2. Radhakrishnan J.K., Sitharaman S., and Gupta S.C. Appl. Surf. Sci. 207 (2003) 33
3. Aoki T., Takeguchi M., Boieriu P., Singh R., Grein C., Chang Y., Sivananthan S., and Smith D.J. J. Crystal Growth 271 (2004) 29
4. Chang Y., Fulk C., Zhao J., Grein C.H., and Sivananthan S. Infrared Phys. Technol. 50 (2007) 284
5. Franc J., Höschl P., Belas E., Grill R., Hlídek P., Moravec P., and Bok J. Nucl. Instrum. Methods Phys. Res. A 434 (1999) 146
6. Lachish U. J. Crystal Growth 225 (2001) 114
7. Asahi T., Oda O., Taniguchi Y., and Koyama A. J. Crystal Growth 149 (1995) 23
8. Chang C.Y., and Tseng B.H. Mater. Sci. and Eng. B 49 (1997) l
9. Glass H.L., Socha A.J., Parfeniuk C.L., and Bakken D.W. J. Crystal Growth 184/185 (1998) 1035
10. Audet N., Guskov V.N., and Greenberg J.H. J. Electron. Mater. 34 (2005) 687
11. Chibani L., Hage-Ali M., and Siffert P. J. Crystal Growth 161 (1996) 153
12. Pelliciari B., Dierre F., Brellier D., and Schaub B. J. Crystal Growth 275 (2005) 99
13. Amman M., Lee J.S., and Luke P.N. J. Appl. Phys. 92 (2002) 3198
14. Schieber M., Schlesinger T.E., James R.B., Hermon H., Yoon H., and Goorsky M. J. Crystal Growth 237-239 (2002) 2082
15. Huang H., Wan R., Zhao Z., Yue Q., Ji R., and Pan S. Proc. SPIE 5640 (2005) 19
16. Greenberg J.H. Prog. Cryst. Growth Charact. Mater. 47 (2003) 196
17. Everson W.J., Ard C.K., Sepich J.L., Dean B.E., Neugebauer G.T., and Schaake H.F. J. Electron. Mater. 24 (1995) 505
18. Vydyanath H.R., Ellsworth J.A., Fisher R.F., Kennedy J.J., Johnson C.J., and Neugebauer G.T. J. Electron. Mater. 22 (1993) 1067
19. Sen S., and Stannard J.E. Prog. Cryst. Growth Charact. Mater. 29 (1994) 253
20. Lyahovitskaya V., Chernyak L., Greenberg J., Kaplan L., and Cahen D. J. Crystal Growth 214/215 (2000) 1155
21. Li G., Jie W., Wang T., and Yang G. Nucl. Instrum. Methods Phys. Res. A 534 (2004) 511
22. Li G., Zhang X., Jie W., and Hui C. J. Crystal Growth 295 (2006) 31
23. Vydyanath H.R., Ellsworth J.A., Parkinson J.B., Kennedy J.J., Dean B., Johnson C.J., Neugebauer G.T., Sepich J., and Liao P. J. Electron. Mater. 22 (1993) 1073
24. Capper P. Properties of Narrow Gap Cadmium-based Compounds INSPEC (1994), Institution of Electrical Engineers, London p. 462
25. Capper P. Properties of Narrow Gap Cadmium-based Compounds INSPEC (1994), Institution of Electrical Engineers, London p. 489
26. Sen S., Liang C.S., Rhiger D.R., Stannard J.E., and Arlinghaus H.F. J. Electron. Mater. 25 (1996) 1188
27. Sen S., Johnson S.M., Kiele J.A., Konkel W.H., and Stannard J.E. Mater. Res. Soc. Symp. Proc. 161 (1990) 3
28. Yu J.Z. Semiconductor Optoelectronic Technology (2003), Chemical Industry Press, Beijing p. 45
29. Weisberg L.R. J. Appl. Phys. 33 (1962) 1817