Mpurities in CdZnTe crystal grown by vertical Bridgman method

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 534, Issue 3, 2004, Pages 511-517

  Li, Guoqiang ^a   Jie, Wanqi ^a   Wang, Tao ^a   Yang, Ge ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Annealing; CdZnTe; Free carrier absorption; IR transmission; Segregation

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTAL IMPURITIES; GRAIN BOUNDARIES; HALL EFFECT; INDUCTIVELY COUPLED PLASMA; INFRARED RADIATION; MASS SPECTROMETRY;

CDZNTE; FREE CARRIER ABSORPTION; VERTIAL BRIDGMAN METHOD;

CADMIUM COMPOUNDS;

EID: 9744226554     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2004.06.135     Document Type: Article

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