Surface morphology of Hg 0.8 Cd 0.2 Te epilayers grown by LPE using horizontal slider

Applied Surface Science

Volumn 207, Issue 1-4, 2003, Pages 33-39

  Radhakrishnan, J K ^a   Sitharaman, S ^a   Gupta, S C ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

HgCdTe; Horizontal slider; LPE; Surface morphology

Indexed keywords

ETCHING; LIQUID PHASE EPITAXY; MORPHOLOGY; PERTURBATION TECHNIQUES;

HORIZONTAL SLIDERS;

MERCURY COMPOUNDS;

EID: 0037470328     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)01227-8     Document Type: Article

References (12)

1. M.G. Astles, Properties of narrow gap cadmium-based compouds, in: P. Capper (Ed.), EMIS Data Review Series (INSPEC), 1994, p. 13.
2. J.K. Radhakrishnan, S. Sitharaman, M. Gautam, F.R. Chavada, S.C. Gupta, in: S.K. Gupta, S.K. Haldar, G. Bhagavannarayana (Eds.), Proceedings of the International Workshop on Preparation and Characteristics of Technical Important Single Crystals NPL, New Delhi, 2001, p. 159.
3. Gupta S.C., Gautam M., Sreedhar A.K. Mater. Sci. Eng., B. 18:1993;91.
4. K.W. Benz, E. Bauser, Crystals: Growth Properties and Applications, vol. 5, Springer, Berlin, 1980.
5. Parker S.G., Weirauch D.F., Chand D. J. Cryst. Growth. 86:1998;173.
6. Li B., Zhang X., Zhu J., Chu J. J. Cryst. Growth. 184-185:1998;1242.
7. Tranchart J.C., Latorre B., Fouchier C., LeGouge Y. J. Cryst. Growth. 72:1985;468.
8. Gupta S.C., Sitharaman S., Nagpal A., Gautam M., Berlouis L.E.A. J. Cryst. Growth. 165:1996;19.
9. Wang C.C. J. Vac. Sci. Technol., B. 9:1991;1740.
10. Pautrat J.L., Magnea N., Faurie J.P. J. Appl. Phys. 53:1982;8668.
11. Chavada F.R., Garg A.K., Kumar S., Gupta S.C. Mater. Sci. Eng., B. 1329:1994;36.
12. Bernardi S. J. Cryst. Growth. 87:1988;365.