Thermal treatment of detector-grade CdZnTe

Journal of Crystal Growth

Volumn 295, Issue 1, 2006, Pages 31-35

  Li, Guoqiang ^a   Zhang, Xiaolu ^b   Jie, Wanqi ^b   Hui, Chun ^c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^c SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

A1. Defects; A1. Segregation; A2. Bridgman technique; B2. Semiconducting II VI materials

Indexed keywords

ANNEALING; CRYSTALS; ELECTRICAL ENGINEERING; HEAT TREATMENT; OPTIMIZATION; PARTIAL PRESSURE; SEGREGATION (METALLOGRAPHY);

BRIDGMAN TECHNIQUE; CZT CRYSTAL; SEMICONDUCTING II-VI MATERIALS;

CADMIUM COMPOUNDS;

EID: 33748450064     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.07.016     Document Type: Article

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