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Volumn 25, Issue 8, 1996, Pages 1188-1195

Reduction of CdZnTe substrate defects and relation to epitaxial HgCdTe quality

(5) Sen, S a Liang, C S a Rhiger, D R a Stannard, J E a Arlinghaus, H F b

a Santa Barbara Research Center (United States)

b Atom Sciences Incorporated (United States)

Author keywords

Annealing; CdZnTe; Defects; HgCdTe; Impurities; Inclusion; IR absorption; Liquid phase epitaxy; Second phase; Sputter initiated resonance ionization spectroscopy (SIRIS); Stoichiometry

Indexed keywords

EID: 0001085695 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02655007 Document Type: Article

Times cited : (64)

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