A new growth method for CdTe: A breakthrough towards large areas

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages 99-105

  Pelliciari, B ^a   Dierre, F ^a   Brellier, D ^a   Schaub, B ^b  

^a CEA LETI   (France)

^b Consultant Technomic SA ^*  (Switzerland)

Author keywords

A2. Growth from solutions; B2. Semiconducting II VI materials

Indexed keywords

CRUCIBLES; ELECTRIC CONDUCTIVITY; IMPURITIES; INFRARED RADIATION; POLYCRYSTALS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TEMPERATURE CONTROL; THICKNESS MEASUREMENT;

CONSTANT TEMPERATURE; GROWTH FROM SOLUTIONS; HIGH-RESISTIVITY MATERIALS; SEMICONDUCTING II-IV MATERIALS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 15844401237     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.072     Document Type: Conference Paper

References (3)

1. T.E. Schlesinger Mater. Sci. Eng. 32 2001 103
2. S. Terterian, M. Chu, and D. Ting J. Electron. Mater. 33 2004 640
3. B. Pelliciari, in: J.B. Mullin (Ed.), Progress in Crystal Growth and Characterization of Materials, vol. 29 (1-4), 1994, pp. 1-39.