n- and p-type post-growth self-doping of CdTe single crystals

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 1155-1157

  Lyahovitskaya, V ^a   Chernyak, L ^b   Greenberg, J ^c   Kaplan, L ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

^c HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CADMIUM; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRONS; PHASE DIAGRAMS; QUENCHING; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; STOICHIOMETRY; TELLURIUM; TEMPERATURE;

DEFECT REACTION; HOLE CONCENTRATIONS; SELF DOPING;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033708013     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00294-3     Document Type: Article

References (5)

1. J.C. Clark, E.D. Jones, P. Capper (Ed.), Narrow Gap Cadmium Based Compound EMIS Datareviews Series, Vol. 10, INSPEC Publication, UK, 1994, pp. 459 and 489.
2. V. Lyahovitskaya L. Kaplan J. Goswami D. Cahen J. Crystal Growth 197 1999 106
3. M.A. Berding Appl. Phys. Lett. 74 1999 552
4. J.H. Greenberg J. Crystal Growth 197 1999 406
5. J.C. Brice Prog. Crystal Growth Charact. 13 1986 39