Electrically active defects in detector-grade CdTe:Cl and CdZnTe materials grown by THM and HPBM

Journal of Crystal Growth

Volumn 161, Issue 1-4, 1996, Pages 153-158

  Chibani, L ^a   Hage Ali, M ^a   Siffert, P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM ALLOYS; CHARACTERIZATION; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; HIGH PRESSURE EFFECTS; IMPURITIES; RADIATION DETECTORS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

CADMIUM TELLURIDE; DEEP DEFECT LEVEL; HIGH PRESSURE BRIDGMAN METHOD; NUCLEAR DETECTION; THERMALLOY STIMULATED CURRENT; VAN DER PAUW RESISTIVITY;

POINT DEFECTS;

EID: 0030123796     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00626-5     Document Type: Article

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